T. Gougousi: search on Z-Library

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1

Langmuir-probe measurements in flowing-afterglow plasmas

Johnsen, R., Shun’ko, E. V., Gougousi, T., Golde, M. F.

Journal:

Physical Review E

Year:

1994

File:

PDF, 2.00 MB

1994

2

Properties of atomic layer deposited HfO2 thin films

Justin C. Hackley, Theodosia Gougousi

Journal:

Thin Solid Films

Year:

2009

Language:

english

File:

PDF, 1.28 MB

english, 2009

3

Recombination of H3+ and D3+ ions in a flowing afterglow plasma

T. Gougousi, R. Johnsen, M.F. Golde

Journal:

International Journal of Mass Spectrometry and Ion Processes

Year:

1995

Language:

english

File:

PDF, 1.99 MB

english, 1995

4

Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

Theodosia Gougousi, John W. Lacis

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 423 KB

english, 2010

5

HfO2-insulated gate N-polar GaN HEMTs with high breakdown voltage

D. J. Meyer, D. S. Katzer, D. A. Deen, D. F. Storm, S. C. Binari, T. Gougousi

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 273 KB

english, 2011

6

Indium Diffusion and Native Oxide Removal during the Atomic Layer Deposition (ALD) of TiO 2 Films on InAs(100) Surfaces

Ye, Liwang, Gougousi, Theodosia

Journal:

ACS Applied Materials & Interfaces

Year:

2013

Language:

english

File:

PDF, 3.18 MB

english, 2013

7

Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO 2 Solutions

Gougousi, Theodosia, Barua, Dipak, Young, Erin D., Parsons, Gregory N.

Journal:

Chemistry of Materials

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

8

Tip-enhanced strong coupling spectroscopy, imaging, and control of a single quantum emitter

Park, Kyoung-Duck, May, Molly A., Leng, Haixu, Wang, Jiarong, Kropp, Jaron A., Gougousi, Theodosia, Pelton, Matthew, Raschke, Markus B.

Journal:

Science Advances

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

9

Engineering of Large Third-Order Nonlinearities in Atomic Layer Deposition Grown Nitrogen-Enriched TiO 2

Kuis, Robinson, Gougousi, Theodosia, Basaldua, Isaac, Burkins, Paul, Kropp, Jaron A., Johnson, Anthony M.

Journal:

Year:

2019

Language:

english

File:

PDF, 933 KB

english, 2019

10

Nano‐Cavity QED with Tunable Nano‐Tip Interaction

May, Molly A., Fialkow, David, Wu, Tong, Park, Kyoung‐Duck, Leng, Haixu, Kropp, Jaron A., Gougousi, Theodosia, Lalanne, Philippe, Pelton, Matthew, Raschke, Markus B.

Journal:

Advanced Quantum Technologies

Year:

2020

File:

PDF, 4.59 MB

2020

11

Charge generation during oxidation of thin Hf metal films on silicon

Theodosia Gougousi, David B. Terry, Gregory N. Parsons

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

12

Deposition of yttrium oxide thin films in supercritical carbon dioxide

Theodosia Gougousi, Zhiying Chen

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 950 KB

english, 2008

13

Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma

Theodosia Gougousi, Michael F. Golde, Rainer Johnsen

Journal:

Chemical Physics Letters

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

14

AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

David Deen, David Storm, David Meyer, D. Scott Katzer, Robert Bass, Steven Binari, Theodosia Gougousi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 325 KB

english, 2011

15

Rinometría acústica en la valoración de la hipertrofia adenoidea: Estudio clínico

George Noussios, Athanassios Skouras, Pantelis Chouridis, Nektarios Argyriou, Spyridon Gougousis, George Kontzoglou

Journal:

Acta Otorrinolaringológica Española

Year:

2008

File:

PDF, 108 KB

2008

16

Is there a role for alpha1-blockers in treating double-J stent-related symptoms?

Charalambos Deliveliotis, Michael Chrisofos, Evagelos Gougousis, Athanasios Papatsoris, Athanasios Dellis, Ioannis M. Varkarakis

Journal:

Year:

2006

Language:

english

File:

PDF, 105 KB

english, 2006

17

677 THE KTP PHOTOSELECTIVE VAPORIZATION OF THE PROSTATE IN 164 MEN WITH BPH

G. Alivizatos, A. Skolarikos, D. Chalikiopoulos, M. Chrysofos, E. Gougousis, K. Livadas, A. Karagiannis

Journal:

European Urology Supplements

Year:

2007

Language:

english

File:

PDF, 318 KB

english, 2007

18

The Use of Acoustic Rhinometry for the Assessment of Adenoid Hypertrophy: A Clinical Study

George Noussios, Athanassios Skouras, Pantelis Chouridis, Nektarios Argyriou, Spyridon Gougousis, George Kontzoglou

Journal:

Acta Otorrinolaringologica (English Edition)

Year:

2008

Language:

english

File:

PDF, 81 KB

english, 2008

19

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

Meyer, David J., Deen, David A., Storm, David F., Ancona, Mario G., Katzer, D. Scott, Bass, Robert, Roussos, Jason A., Downey, Brian P., Binari, Steven C., Gougousi, Theodosia, Paskova, Tanya, Preble,

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 650 KB

english, 2013

20

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

Gougousi, Theodosia, Niu, Dong, Ashcraft, Robert W., Parsons, Gregory N.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 258 KB

english, 2003

21

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Storm, D.F., Deen, D.A., Katzer, D.S., Meyer, D.J., Binari, S.C., Gougousi, T., Paskova, T., Preble, E.A., Evans, K.R., Smith, David J.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 881 KB

english, 2013

22

Atmospheric pressure plasma enhanced chemical vapor deposition of hydrophobic coatings using fluorine-based liquid precursors

Yim, Jacqueline H., Rodriguez-Santiago, Victor, Williams, André A., Gougousi, Theodosia, Pappas, Daphne D., Hirvonen, James K.

Journal:

Surface and Coatings Technology

Year:

2013

Language:

english

File:

PDF, 2.32 MB

english, 2013

23

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Gougousi, Theodosia, Kelly, M. Jason, Terry, David B., Parsons, Gregory N.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 318 KB

english, 2003

24

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.38 MB

english, 2014

25

Interface Between Atomic Layer Deposition Ta 2 O 5 Films and GaAs(100) Surfaces

Gougousi, Theodosia, Ye, Liwang

Journal:

The Journal of Physical Chemistry C

Year:

2012

Language:

english

File:

PDF, 4.37 MB

english, 2012

26

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

Park, K. J., Doub, J. M., Gougousi, T., Parsons, G. N.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 350 KB

english, 2005

27

Yield determination of OH (v=0,1) radicals produced by the electron-ion recombination of protonated molecules

Gougousi, Theodosia, Johnsen, Rainer, Golde, Michael F.

Journal:

The Journal of Chemical Physics

Year:

1997

Language:

english

File:

PDF, 326 KB

english, 1997

28

In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces

Ye, Liwang, Gougousi, Theodosia

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.03 MB

english, 2014

29

Measurement of the absolute yield of CO(a [sup 3]Π)+O products in the dissociative recombination of CO[sub 2][sup +] ions with electrons

Skrzypkowski, Miroslaw P., Gougousi, Theodosia, Johnsen, Rainer, Golde, Michael F.

Journal:

The Journal of Chemical Physics

Year:

1998

Language:

english

File:

PDF, 404 KB

english, 1998

30

The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions

Gougousi, Theodosia, Kelly, M. Jason, Parsons, Gregory N.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 288 KB

english, 2002

31

Photodissociation study of CH[sub 3]Br in the first continuum

Gougousi, Theodosia, Samartzis, Peter C., Kitsopoulos, Theofanis N.

Journal:

The Journal of Chemical Physics

Year:

1998

Language:

english

File:

PDF, 365 KB

english, 1998

32

Yield determination of OH(v=0,1) radicals produced by the electron-ion recombination of H[sub 3]O[sup +] ions

Gougousi, Theodosia, Johnsen, Rainer, Golde, Michael F.

Journal:

The Journal of Chemical Physics

Year:

1997

Language:

english

File:

PDF, 429 KB

english, 1997

33

Interface of atomic layer deposited HfO[sub 2] films on GaAs (100) surfaces

Hackley, Justin C., Demaree, J. Derek, Gougousi, Theodosia

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 274 KB

english, 2008

34

Photofragmentation study of Cl[sub 2] using ion imaging

Samartzis, Peter C., Sakellariou, Ioannis, Gougousi, Theodosia, Kitsopoulos, Theofanis N.

Journal:

The Journal of Chemical Physics

Year:

1997

Language:

english

File:

PDF, 417 KB

english, 1997

35

Atomic layer deposited Ta[sub 2]O[sub 5] gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Deen, D. A., Storm, D. F., Bass, R., Meyer, D. J., Katzer, D. S., Binari, S. C., Lacis, J. W., Gougousi, T.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 611 KB

english, 2011

36

Growth and interface of HfO[sub 2] films on H-terminated Si from a TDMAH and H[sub 2]O atomic layer deposition process

Hackley, Justin C., Demaree, J. Derek, Gougousi, Theodosia

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2008

Language:

english

File:

PDF, 702 KB

english, 2008

37

Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H[sub 2]O and carbon-containing species

Gougousi, Theodosia

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 362 KB

english, 2004

38

Nucleation of HfO[sub 2] atomic layer deposition films on chemical oxide and H-terminated Si

Hackley, Justin C., Gougousi, Theodosia, Demaree, J. Derek

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 1.00 MB

english, 2007

39

Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Barua, Dipak, Gougousi, Theodosia, Young, Erin D., Parsons, Gregory N.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 403 KB

english, 2006

40

Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

Hackley, Justin C., Demaree, J. Derek, Gougousi, Theodosia

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 353 KB

english, 2007

41

Low Temperature Deposition of Metal Oxide Thin Films in Supercritical Carbon Dioxide Using Metal-organic Precursors

Gougousi, Theodosia, Chen, Zhiying

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 260 KB

english, 2007

42

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

Gougousi, Theodosia, Hackley, Justin C., Demaree, J. Derek, Lacis, John W.

Journal:

Journal of The Electrochemical Society

Year:

2010

Language:

english

File:

PDF, 489 KB

english, 2010

43

Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces

Gougousi, Theodosia, Lacis, John W., Hackley, Justin C, Demaree, John

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 330 KB

english, 2009

44

Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

Hackley, Justin C, Demaree, J. Derek, Gougousi, Theodosia

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 156 KB

english, 2008

45

Dermoid Cysts of the Floor of the Mouth: Two Case Reports

Makos, Christos, Noussios, George, Peios, Marinos, Gougousis, Spyridon, Chouridis, Pantelis

Journal:

Case Reports in Medicine

Year:

2011

Language:

english

File:

PDF, 2.00 MB

english, 2011

46

Stability and Surface Reactivity of Anatase TiO2 Films

Henegar, A. J., Gougousi, T.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

47

AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Deen, D.A., Binari, S.C., Storm, D.F., Katzer, D.S., Roussos, J.A., Hackley, J.C., Gougousi, T.

Journal:

Electronics Letters

Year:

2009

Language:

english

File:

PDF, 125 KB

english, 2009

48

Run to run control in tungsten chemical vapor deposition using H[sub 2]/WF[sub 6] at low pressures

R. Sreenivasan, T. Gougousi, Y. Xu, J. Kidder, E. Zafiriou, G. W. Rubloff

Year:

2001

Language:

english

File:

PDF, 665 KB

english, 2001

49

Thickness metrology and end point control in W chemical vapor deposition process from SiH[sub 4]/WF[sub 6] using in situ mass spectrometry

Y. Xu, T. Gougousi, L. Henn-lecordier, Y. Liu, S. Cho, G. W. Rubloff

Year:

2002

Language:

english

File:

PDF, 1.10 MB

english, 2002

50

Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H[sub 2]/WF[sub 6]

T. Gougousi, Y. Xu, J. N. Kidder, G. W. Rubloff, C. R. Tilford

Year:

2000

Language:

english

File:

PDF, 1.19 MB

english, 2000